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HiPerFET TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q g , High dv/dt
IXFH 21N50Q
IXFT 21N50Q
V DSS = 500 V
I D25 = 21 A
R DS(on) = 0.25 ?
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
500
500
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 30
± 40
21
84
21
30
V
V
A
A
A
mJ
TO-268 (D3) ( IXFT)
(TAB)
E AS
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
1.5
15
mJ
V/ns
G
S
(TAB)
P D
T J
T JM
T stg
T L
T C = 25 ° C
1.6 mm (0.063 in) from case for 10 s
280
-55 to +150
150
-55 to +150
300
W
° C
° C
° C
° C
G = Gate D = Drain
S = Source TAB = Drain
Features
M d
Mounting torque
1.13/10 Nm/lb.in.
l
IXYS advanced low Q g process
Weight
TO-247
TO-268
6
4
g
g
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
l
l
Low R DS (on)
Rated for unclamped Inductive load
switching (UIS) rated
V DSS
V GS(th)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 4 mA
500
2.5
4.5
V
V
l
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
I GSS
I DSS
V GS = ± 30 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
± 100
25
1
nA
μ A
mA
Advantages
l
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.25
?
l
l
Space savings
High power density
? 2004 IXYS All rights reserved
98718B(02/04)
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